Multi-Junction Switching in Bi$_2$Sr$_{1.6}$La$_{0.4}$CuO$_{6+\delta}$ Intrinsic Josephson Junctions

TL;DR

This study investigates multi-junction switching in intrinsic Josephson junction arrays of Bi$_2$Sr$_{1.6}$La$_{0.4}$CuO$_{6+eta}$, demonstrating control over switching behavior and clarifying the process as successive rather than collective.

Contribution

It introduces a method to tune the number of simultaneously switching junctions and clarifies the mechanism as a successive process based on load curve gradients.

Findings

Number of switching junctions ($N$) can be controlled via load resistance.

Switching process is independent of escape rates in quantum tunneling regime.

MJS is explained as a successive process influenced by load curve gradients.

Abstract

We study the dynamics of multi-junction switching (MJS): several intrinsic Josephson junctions (IJJs) in an array switch to the finite voltage state simultaneously. The number of multi-switching junctions ($N$) was successfully tuned by changing the load resistance serially connected to an Bi$_2$Sr$_{1.6}$La$_{0.4}$CuO$_{6+\delta}$ IJJ array. The independence of the escape rates of $N$ in the macroscopic quantum tunneling regime indicates that MJS is a $successive$ switching process rather than a $collective$ process. The origin of MJS is explained by the gradient of a load curve and the relative magnitudes of the switching currents of quasiparticle branches in the current-voltage plane.