Fractional Quantum Hall Effect at High Fillings in a Two-subband Electron System
J. Shabani, Y. Liu, M. Shayegan

TL;DR
This study investigates fractional quantum Hall states in a two-subband electron system within a wide GaAs quantum well, revealing new high-filling states and differences from single-subband systems.
Contribution
It demonstrates the distinct fractional quantum Hall sequences at high fillings in a two-subband system and reports new observed states not seen in single-subband systems.
Findings
No even-denominator states at ν=5/2 and 7/2 when Fermi energy is in the ground Landau level.
Observation of states at ν = (i + p/(2p ± 1)) with i=2,3 and p=1,2,3.
Discovery of new fractional states at ν=13/5, 17/5, 18/5, and 25/7.
Abstract
Magneto-transport measurements in a clean two-dimensional electron system confined to a wide GaAs quantum well reveal that, when the electrons occupy two electric subbands, the sequences of fractional quantum Hall states observed at high fillings () are distinctly different from those of a single-subband system. Notably, when the Fermi energy lies in the ground state Landau level of either of the subbands, no quantum Hall states are seen at the even-denominator = 5/2 and 7/2 fillings; instead the observed states are at where = 2, 3, and = 1, 2, 3, and include several new states at = 13/5, 17/5, 18/5, and 25/7.
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