Spin Modulation in Semiconductor Lasers

TL;DR

This paper analytically investigates how spin-polarized electron injection in semiconductor lasers can enhance their bandwidth and switching capabilities, offering insights into improved laser performance.

Contribution

It provides a novel analytical framework for understanding spin modulation effects in semiconductor lasers, extending beyond previous steady-state analyses.

Findings

Spin injection enhances laser bandwidth.

Spin modulation improves switching properties.

Analytical methods elucidate dynamic behaviors.

Abstract

We provide an analytic study of the dynamics of semiconductor lasers with injection (pump) of spin-polarized electrons, previously considered in the steady-state regime. Using complementary approaches of quasi-static and small signal analyses, we elucidate how the spin modulation in semiconductor lasers can improve performance, as compared to the conventional (spin-unpolarized) counterparts. We reveal that the spin-polarized injection can lead to an enhanced bandwidth and desirable switching properties of spin-lasers.