Simulation of hydrogenated graphene Field-Effect Transistors through a multiscale approach

TL;DR

This paper analyzes the performance of hydrogenated graphene FETs, using multiscale modeling to evaluate their electronic properties and potential advantages over traditional graphene devices.

Contribution

It introduces a multiscale approach combining GW calculations, tight-binding models, and ballistic transport simulations for hydrogenated graphene FETs.

Findings

Large energy gap in hydrogenated graphene improves device performance.

Hydrogenated graphene FETs exhibit high Ion and Ion/Ioff ratios.

Reduced band-to-band tunneling enhances device efficiency.

Abstract

In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The approach is based on accurate calculations of the energy bands by means of GW approximation, subsequently fitted with a three-nearest neighbor (3NN) sp3 tight-binding Hamiltonian, and finally used to compute ballistic transport in transistors based on functionalized graphene. Due to the large energy gap, the proposed devices have many of the advantages provided by one-dimensional graphene nanoribbon FETs, such as large Ion and Ion/Ioff ratios, reduced band-to-band tunneling, without the corresponding disadvantages in terms of prohibitive lithography and patterning requirements for circuit integration.