Goos-H\"{a}nchen-like shifts for Dirac fermions in monolayer graphene barrier

TL;DR

This paper studies how Dirac fermions in monolayer graphene experience lateral shifts during tunneling, revealing tunable effects influenced by barrier parameters, with potential applications in graphene-based electronic devices.

Contribution

It introduces a detailed analysis of Goos-H"{a}nchen-like shifts for Dirac fermions in graphene barriers, highlighting their dependence on barrier properties and potential for device applications.

Findings

Lateral shifts can be positive or negative depending on tunneling regime.

Transmission resonances can significantly enhance lateral shifts.

Shift magnitudes are tunable via barrier height and induced gap.

Abstract

We investigate the Goos-H\"{a}nchen-like shifts for Dirac fermions in transmission through a monolayer graphene barrier. The lateral shifts, as the functions of the barrier's width and the incidence angle, can be negative and positive in Klein tunneling and classical motion, respectively. Due to their relations to the transmission gap, the lateral shifts can be enhanced by the transmission resonances when the incidence angle is less than the critical angle for total reflection, while their magnitudes become only the order of Fermi wavelength when the incidence angle is larger than the critical angle. These tunable beam shifts can also be modulated by the height of potential barrier and the induced gap, which gives rise to the applications in graphene-based devices.