Electron spin coherence and electron nuclear double resonance of Bi donors in natural Si
Richard E. George, Wayne Witzel, H. Riemann, N.V. Abrosimov, N., Notzel, Mike L. W. Thewalt, John J. L. Morton

TL;DR
This study investigates the electron spin coherence and electron nuclear double resonance of bismuth donors in natural silicon, revealing detailed spectral properties and coherence transfer capabilities relevant for quantum technology applications.
Contribution
It provides the first detailed electron nuclear double resonance spectra of Bi donors in silicon across a broad frequency range, confirming coherence transfer at high frequencies.
Findings
Confirmed coherence transfer between electron and nuclear spins at high frequencies
Provided detailed spectral diffusion data for Bi donors in silicon
Enhanced understanding of hyperfine interactions in Bi-doped silicon
Abstract
Donors in silicon hold considerable promise for emerging quantum technologies, due to the their uniquely long electron spin coherence times. Bi donors in silicon differ from P and other Group V donors in several significant respects: they have the strongest binding energy (70.98 meV), a large nuclear spin (I = 9/2) and strong hyperfine coupling constant (A = 1475.4 MHz). These larger energy scales allow a detailed test of theoretical models describing the spectral diffusion mechanism that is known to govern the electron spin coherence time (T2e) of P-donors in natural silicon. We report the electron nuclear double resonance spectra of the Bi donor, across the range 200 MHz to 1.4 GHz, and confirm that coherence transfer is possible between electron and nuclear spin degrees of freedom at these higher frequencies.
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