Decoupling Graphene from SiC(0001) via Oxidation

TL;DR

This paper presents a CMOS-compatible method to decouple epitaxial graphene from SiC(0001) by inserting a thin oxide layer, restoring its electrical properties without damaging the graphene.

Contribution

It introduces a novel low-temperature oxidation process to effectively decouple graphene from SiC substrates, improving its electrical performance.

Findings

Successful insertion of oxide layer restores graphene pi-bands

Process is CMOS-compatible and low-temperature

Enhances electrical properties of epitaxial graphene

Abstract

When epitaxial graphene layers are formed on SiC(0001), the first carbon layer (known as the "buffer layer"), while relatively easy to synthesize, does not have the desirable electrical properties of graphene. The conductivity is poor due to a disruption of the graphene pi-bands by covalent bonding to the SiC substrate. Here we show that it is possible to restore the graphene pi-bands by inserting a thin oxide layer between the buffer layer and SiC substrate using a low temperature, CMOS-compatible process that does not damage the graphene layer.