Thermionic Emission as a tool to study transport in undoped nFinFETs
Giuseppe C. Tettamanzi, Abhijeet Paul, Gabriel P. Lansbergen and, Jan Verduijn, Sunhee Lee, Nadine Collaert, Serge Biesemans and, Gerhard Klimeck, Sven Rogge
TL;DR
This paper demonstrates that thermionic emission analysis effectively characterizes transport properties in undoped nFinFETs, providing insights into barrier height and active cross-section evolution, validated by experiments and simulations.
Contribution
It introduces thermionic emission as a novel method to study transport in undoped nFinFETs, validated through experiments and Tight Binding simulations.
Findings
Good agreement between experiments and simulations
Thermionic approach confirms transport characteristics
Potential for device improvement
Abstract
Thermally activated sub-threshold transport has been investigated in undoped triple gate MOSFETs. The evolution of the barrier height and of the active cross-section area of the channel as a function of gate voltage has been determined. The results of our experiments and of the Tight Binding simulations we have developed are both in good agreement with previous analytical calculations, confirming the validity of thermionic approach to investigate transport in FETs. This method provides an important tool for the improvement of devices characteristics.
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