In-situ quantitative measurement of electric fields in zinc oxide thin films using electrostatic force microscopy

TL;DR

This study demonstrates the use of electrostatic force microscopy to directly observe and measure local electric fields in ZnO thin films, providing insights into the material's nonlinear electrical behavior at the grain boundaries.

Contribution

It introduces the application of Surface Potential Imaging with AFM to in-situ measure electric fields in ZnO thin films, a novel approach for this material.

Findings

Surface potential images are affected by surface morphology.

A height difference of 80 nm correlates with a 66 mV voltage difference.

A simple model explains the influence of surface surroundings on measurements.

Abstract

Zinc oxide (ZnO) is the most important material for the fabrication of modern varistors (variable resistors). It is known that the highly nonlinear current-voltage relationship of ZnO varistors is due to effects taking place at the grain boundaries. For an accurate investigation of the mechanism of this process, techniques are required that allow a direct observation of local electric fields in varistor samples. The objective of this study is to show that an atomic force microscope in a set-up as an electrostatic force microscope is capable of the in-situ observation and measurement of an applied electric field in samples of ZnO thin films. The technique of Surface Potential Imaging was used to investigate laterally applied electric fields in this type of sample for the first time. The local change of the electric field across the samples was monitored and quantified. It was observed here that the morphology of the surface is convoluted into the surface potential images and the magnitude of this effect was quantified by taking surface potential images without an applied electric field. For the given measurement conditions, a height difference of 80 nm in the topography image resulted in a voltage difference of roughly 66 mV in the surface potential image. A simple model was provided that attributes this observation to the surroundings of the surface atom closest to the imaging tip.