HFinFET: A Scalable, High Performance, Low Leakage Hybrid N-Channel FET

TL;DR

This paper introduces HFinFET, a hybrid transistor combining HEMT and FinFET features, designed for high performance and low leakage, validated through 3D simulations and benchmarking against existing devices.

Contribution

It presents a novel hybrid transistor design and provides simulation-based performance analysis, demonstrating advantages over traditional HEMT and FinFET devices.

Findings

HFinFET shows improved performance metrics.

The device exhibits better off-state control.

Benchmarking indicates superior scalability and leakage reduction.

Abstract

In this letter we propose the design and simulation study of a novel transistor, called HFinFET, which is a hybrid of a HEMT and a FinFET, to obtain excellent performance and good off state control. Followed by the description of the design, 3D device simulation has been performed to predict the characteristics of the device. The device has been benchmarked against published state of the art HEMT as well as planar and non-planar Si NMOSFET data of comparable gate length using standard benchmarking techniques.