Dielectric function of the semiconductor hole gas

TL;DR

This paper investigates the dielectric properties of p-doped zinc-blende III-V semiconductors' hole gas, revealing oscillation beating and significant plasmon dispersion corrections at high frequencies.

Contribution

It models the valence band using Luttinger's Hamiltonian and analyzes dielectric behavior within the random phase approximation, highlighting new oscillation and dispersion phenomena.

Findings

Beating of Friedel oscillations between heavy and light holes.

Large frequency corrections to plasmon dispersion.

Distinct dielectric features in p-doped zinc-blende semiconductors.

Abstract

We study the dielectric function of the homogeneous hole gas in p-doped zinc-blende III-V bulk semiconductors within random phase approximation with the valence band being modeled by Luttinger's Hamiltonian in the spherical approximation. In the static limit we find a beating of Friedel oscillations between the two Fermi momenta for heavy and light holes, while at large frequencies dramatic corrections to the plasmon dispersion occur.