Epitaxial Graphene Electronic Structure And Transport

TL;DR

This paper reviews the development, electronic properties, and device applications of epitaxial graphene on silicon carbide, highlighting its potential as a platform for carbon electronics and recent technological advances.

Contribution

It provides a comprehensive overview of epitaxial graphene's growth, structure, electronic properties, and emerging device prototypes, emphasizing recent progress and future prospects.

Findings

Epitaxial graphene exhibits unique electronic properties suitable for advanced electronics.

Multilayer epitaxial graphene consists of electronically decoupled sheets.

Device prototypes include quantum Hall resistance standards and high-frequency amplifiers.

Abstract

Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure, and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analog epitaxial graphene amplifiers.