Electronic transport in two dimensional graphene
S. Das Sarma, Shaffique Adam, E. H. Hwang, and Enrico Rossi

TL;DR
This review comprehensively discusses the fundamental electronic transport properties of two-dimensional graphene, comparing it with traditional semiconductor systems and highlighting unique phenomena arising from its Dirac spectrum.
Contribution
It provides a unified perspective on graphene transport, integrating experimental and theoretical insights, and discusses open questions and mechanisms affecting carrier mobility and conductivity.
Findings
Graphene exhibits unique transport phenomena due to its gapless, massless Dirac spectrum.
Multiple scattering mechanisms significantly influence carrier mobility in graphene.
Quantum effects like Klein tunneling and quantum Hall effects are prominent in graphene transport.
Abstract
We provide a broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature dependent carrier transport in doped or gated graphene structures. A salient feature of our review is a critical comparison between carrier transport in graphene and in two-dimensional semiconductor systems (e.g. heterostructures, quantum wells, inversion layers) so that the unique features of graphene electronic properties arising from its gap- less, massless, chiral Dirac spectrum are highlighted. Experiment and theory as well as quantum and semi-classical transport are discussed in a synergistic manner in order to provide a unified and comprehensive perspective. Although the emphasis of the review is on those aspects of graphene transport where reasonable consensus exists in the literature, open questions are discussed as well. Various physical…
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