Lithography-free Fabrication of High Quality Substrate-supported and Freestanding Graphene devices

TL;DR

This paper introduces a lithography-free method using shadow masks for fabricating high-quality graphene devices, resulting in higher mobility and cleaner samples compared to traditional lithography techniques.

Contribution

A novel lithography-free fabrication process for graphene devices that reduces contamination and achieves ultra-high mobility, including suspended samples.

Findings

Devices have significantly higher mobility than standard methods.

Suspended graphene samples reach mobility up to 120,000 cm^2/Vs.

Technique eliminates lithography-induced contaminants.

Abstract

We present a lithography-free technique for fabrication of clean, high quality graphene devices. This technique is based on evaporation through hard Si shadow masks, and eliminates contaminants introduced by lithographical processes. We demonstrate that devices fabricated by this technique have significantly higher mobility values than those by standard electron beam lithography. To obtain ultra-high mobility devices, we extend this technique to fabricate suspended graphene samples with mobility as high as 120,000 cm^2/Vs.