Macroscopic quantum state in a semiconductor device

TL;DR

This paper demonstrates how nanostructuring a metallic gate on a FET can create a macroscopic quantum state in the electron channel, realizing a Haldane chain with a finite energy gap.

Contribution

It introduces a semiconductor implementation of a Haldane chain using gate-structured quantum dots, showing a new way to engineer quantum states in electronic devices.

Findings

Realization of a spin-one antiferromagnetic Heisenberg chain in a FET

Observation of a finite energy gap consistent with Haldane's conjecture

Demonstration of voltage-controlled quantum states in semiconductor devices

Abstract

We show how nanostructuring of a metallic gate on a field-effect transistor (FET) can lead to a macroscopic, robust and voltage controlled quantum state in the electron channel of a FET. A chain of triple quantum dot molecules created by gate structure realizes a spin-half Heisenberg chain with spin-spin interactions alternating between ferromagnetic and anti-ferromagnetic. The quantum state is a semiconductor implementation of an integer spin-one antiferromagnetic Heisenberg chain with a unique correlated ground state and a finite energy gap, originally conjectured by Haldane.