Strain-mediated metal-insulator transition in epitaxial ultra-thin films of NdNiO3

TL;DR

This study investigates how epitaxial strain influences the metal-insulator transition in ultra-thin NdNiO3 films, revealing strain-dependent suppression or modification of the transition.

Contribution

It demonstrates that epitaxial strain can completely suppress or alter the metal-insulator transition in NdNiO3 thin films, providing insights into strain engineering of electronic phases.

Findings

Metal-insulator transition is quenched under compressive strain.

Transition persists but is modified under tensile strain.

Strain significantly affects electronic and structural properties.

Abstract

We have synthesized epitaxial NdNiO$_{3}$ ultra-thin films in a layer-by-layer growth mode under tensile and compressive strain on SrTiO$_{3}$ (001) and LaAlO$_3$ (001), respectively. A combination of X-ray diffraction, temperature dependent resistivity, and soft X-ray absorption spectroscopy has been applied to elucidate electronic and structural properties of the samples. In contrast to the bulk NdNiO$_{3}$, the metal-insulator transition under compressive strain is found to be completely quenched, while the transition remains under the tensile strain albeit modified from the bulk behavior.