Investigation of mechanical losses of thin silicon flexures at low temperatures
R. Nawrodt, C. Schwarz, S. Kroker, I. W. Martin, F. Br\"uckner, L., Cunningham, V. Gro{\ss}e, A. Grib, D. Heinert, J. Hough, T. K\"asebier, E. B., Kley, R. Neubert, S. Reid, S. Rowan, P. Seidel, M. Th\"urk, A. T\"unnermann

TL;DR
This study measures the mechanical loss of silicon flexures at low temperatures, revealing surface loss as a limiting factor for silicon-based oscillators and providing a surface loss parameter relevant for gravitational wave detectors.
Contribution
It provides new measurements of silicon flexure losses at low temperatures and introduces a surface loss parameter, highlighting differences from fused silica.
Findings
Lowest mechanical loss observed was 3×10⁻⁸ at 10 K
Surface loss parameter α_s = 0.5 pm for silicon
Surface loss is lower than that of fused silica
Abstract
The investigation of the mechanical loss of different silicon flexures in a temperature region from 5 to 300 K is presented. The flexures have been prepared by different fabrication techniques. A lowest mechanical loss of was observed for a 130 m thick flexure at around 10 K. While the mechanical loss follows the thermoelastic predictions down to 50 K a difference can be observed at lower temperatures for different surface treatments. This surface loss will be limiting for all applications using silicon based oscillators at low temperatures. The extraction of a surface loss parameter using different results from our measurements and other references is presented. We focused on structures that are relevant for gravitational wave detectors. The surface loss parameter = 0.5 pm was obtained. This reveals that the surface loss of silicon is significantly…
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