Scaling and interaction-assisted transport in graphene with one-dimensional defects

TL;DR

This paper investigates how one-dimensional defects and electron interactions in graphene influence scattering and transport, revealing that interactions can enhance conductivity contrary to typical one-dimensional systems.

Contribution

It introduces a novel analysis of interaction-induced effects on scattering in graphene with 1D defects, showing potential for enhanced transport due to electron interactions.

Findings

Interactions induce singularities in scattering at zero temperature.

Repulsive interactions can enhance transport in graphene with defects.

Predicted effects are exponentially large for strong scatterers under strain.

Abstract

We analyze the scattering from one-dimensional defects in intrinsic graphene. The Coulomb repulsion between electrons is found to be able to induce singularities of such scattering at zero temperature as in one-dimensional conductors. In striking contrast to electrons in one space dimension, however, repulsive interactions here can enhance transport. We present explicit calculations for the scattering from vector potentials that appear when strips of the material are under strain. There the predicted effects are exponentially large for strong scatterers.