Microwave-assisted transport via localized states in degenerately doped Si single electron transistors

TL;DR

This paper investigates microwave-assisted and DC transport in degenerately doped silicon single electron transistors, proposing a hopping model that explains both temperature dependence and AC response, including non-monotonic power effects.

Contribution

It introduces a novel model based on hopping via localized impurity states to explain transport phenomena in doped silicon single electron transistors.

Findings

Resonant microwave-assisted and DC transport behaviors are characterized.

The model explains the non-monotonic power dependence of resonant current.

Spatial Rabi oscillations between localized states are confirmed as a key mechanism.

Abstract

Resonant microwave-assisted and DC transport are investigated in degenerately doped silicon single electron transistors. A model based on hopping via localized impurity states is developed and first used to explain both the DC temperature dependence and the AC response. In particular, the non-monotonic power dependence of the resonant current under irradiation is proved to be consistent with spatial Rabi oscillations between these localized states.