InAs nanowire hot-electron Josephson transistor

TL;DR

This paper demonstrates an InAs nanowire Josephson transistor where supercurrent is controlled by hot-quasiparticle injection, enabling low dissipation and high-speed switching, advancing hybrid nanodevice technology.

Contribution

It introduces a novel InAs nanowire Josephson transistor utilizing hot-quasiparticle injection to control supercurrent, highlighting a new approach for out-of-equilibrium hybrid nanodevices.

Findings

Supercurrent can be modulated by hot-quasiparticle injection.

The device exhibits reduced dissipation and high switching speed.

Potential for new out-of-equilibrium hybrid nanodevice concepts.

Abstract

At a superconductor (S)-normal metal (N) junction pairing correlations can "leak-out" into the N region. This proximity effect [1, 2] modifies the system transport properties and can lead to supercurrent flow in SNS junctions [3]. Recent experimental works showed the potential of semiconductor nanowires (NWs) as building blocks for nanometre-scale devices [4-7], also in combination with superconducting elements [8-12]. Here, we demonstrate an InAs NW Josephson transistor where supercurrent is controlled by hot-quasiparticle injection from normal-metal electrodes. Operational principle is based on the modification of NW electron-energy distribution [13-20] that can yield reduced dissipation and high-switching speed. We shall argue that exploitation of this principle with heterostructured semiconductor NWs opens the way to a host of out-of-equilibrium hybrid-nanodevice concepts [7, 21].