Microwave driven arbitrary coupling between trapped charge resonances in a silicon single electron transistor
Morteza Erfani, David G. Hasko, Alessandro Rossi, Wan Sik Cho and, Jung-Bum Choi

TL;DR
This paper demonstrates a novel microwave-driven method to achieve arbitrary coupling between charge resonances in a silicon transistor, enabling faster quantum gate operations without additional wiring or adiabatic control.
Contribution
It introduces a nonlinear silicon transistor approach for controllable qubit coupling via microwave frequencies, avoiding traditional adiabatic and wiring-based methods.
Findings
Resonances can be selectively coupled using microwave frequencies.
Nonlinear behavior generates additional signals for coupling.
Potential for rapid quantum state manipulation.
Abstract
In quantum computation, information is processed by gates that must coherently couple separate qubits. In many systems the qubits are naturally coupled, but such an always-on interaction limits the algorithms that may be implemented. Coupling interactions may also be directed in devices and circuits that are provided with additional control wiring. This can be achieved by adjusting the gate voltage in a semiconductor device or an additional flux in a superconducting device. Such control signals must be applied adiabatically (limiting the speed) and the additional wiring provides pathways for noise, which leads to decoherence. Here we demonstrate an alternative approach to coupling by exploiting the nonlinear behaviour of a degenerately doped silicon transistor. A single transistor can exhibit a large number of individual resonances, which are seen as changes in the source-drain current…
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