An integrated Micromegas UV-photon detector
Joost Melai, Alexey Lyashenko, Amos Breskin, Harry van der Graaf, Jan, Timmermans, Jan Visschers, Cora Salm, Jurriaan Schmitz

TL;DR
This paper presents a novel UV-photon detector integrating a Micromegas-like multiplier with a CsI photocathode using InGrid technology, enabling monolithic light-sensitive imaging with high gain and low ion back flow.
Contribution
It introduces a new integrated UV-photon detector combining Micromegas and CMOS-compatible InGrid technology for improved imaging applications.
Findings
Maximum gain of ~6000 achieved in Ar/CH4.
CsI photocathode does not affect device performance.
Ion back flow fraction is 2%.
Abstract
Preliminary results of a photon detector combining a Micromegas like multiplier coated with a UV-sensitive CsI photocathode are described. The multiplier is made in a CMOS compatible InGrid technology, which allows to post-process it directly on the surface of an imaging IC. This method is aimed at building light-sensitive imaging detectors where all elements are monolithically integrated. We show that the CsI photocathode deposited in the InGrid mesh does not alter the device performance. Maximum gains of ~6000 were reached in a single-grid element operated in Ar/CH4, with a 2% Ion Back Flow fraction returning to the photocathode.
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