Unique Electron Spin Relaxation Induced by Confined Phonons in Nanowire-Based Quantum Dots

TL;DR

This paper theoretically explores how confined phonons in nanowire-based quantum dots cause unique electron spin relaxation behaviors, including strong relaxation at van Hove singularities and suppression at form factor zeros, revealing potential for spin manipulation.

Contribution

It reveals the impact of one-dimensional confined phonons on electron spin relaxation, highlighting unique features due to van Hove singularities and form factor zeros in nanowire quantum dots.

Findings

Strong spin relaxation at van Hove singularities

Suppressed relaxation at form factor zeros

Potential for spin state manipulation and phonon property probing

Abstract

Electron spin relaxation in nanowire-based quantum dots induced by confined phonons is investigated theoretically. Due to the one-dimensional nature of the confined phonons, the van Hove singularities of the confined phonons and the zero of the form factor of the electron-phonon coupling can lead to unique features of the spin relaxation rate. Extremely strong spin relaxation can be obtained at the van Hove singularity. Meanwhile the spin relaxation rate can also be greatly suppressed at the zero of the form factor. This unique feature indicates the flexibility of nanowire-based quantum dots in the manipulation of spin states. It also offers a way to probe the property of the confined phonons.