Graphene-based spin-pumping transistor

TL;DR

This paper proposes a graphene-based spin-pumping transistor that uses quantum mechanics to control pure spin currents via electrostatic gating, promising high-speed, low-power spintronic devices.

Contribution

It introduces a novel graphene transistor concept that modulates spin currents without charge flow, advancing spintronics with quantum-mechanical modeling and gate control.

Findings

Graphene can serve as a gate-controlled spin current transistor.

Spin currents can be modulated electrostatically without charge currents.

Potential for high-speed, low-power spintronic devices.

Abstract

We demonstrate with a fully quantum-mechanical approach that graphene can function as gate-controllable transistors for pumped spin currents, i.e., a stream of angular momentum induced by the precession of adjacent magnetizations, which exists in the absence of net charge currents. Furthermore, we propose as a proof of concept how these spin currents can be modulated by an electrostatic gate. Because our proposal involves nano-sized systems that function with very high speeds and in the absence of any applied bias, it is potentially useful for the development of transistors capable of combining large processing speeds, enhanced integration and extremely low power consumption.