Reduction of high reset currents in unipolar resistance switching Pt/SrTiOx/Pt capacitors using acceptor doping

TL;DR

This study demonstrates that acceptor doping with Co or Mn in SrTiOx capacitors significantly reduces high reset currents in unipolar resistance switching, enhancing their suitability for nonvolatile memory applications.

Contribution

It introduces acceptor doping as an effective method to lower reset currents in unipolar resistance switching devices, providing a practical approach for memory technology improvements.

Findings

Doping with Co or Mn reduces leakage current in SrTiOx capacitors.

Lowering compliance current decreases reset current by about 20 times.

Carrier doping offers a viable alternative to improve unipolar resistance switching performance.

Abstract

The high reset current, IR, in unipolar resistance switching is an important issue which should be resolved for practical applications in nonvolatile memories. We showed that,during the forming and set processes, the compliance current, Icomp, can work as a crucial parameter to reduce IR. Doping with Co or Mn can significantly reduce the leakage current in capacitors made using SrTiOx film, opening a larger operation window for Icomp. By decreasing Icomp with acceptor doping, we could reduce IR in SrTiOx films by a factor of approximately 20. Our work suggests that the decrease of Icomp by carrier doping could be a viable alternative for reducing IR in unipolar resistance switching.