Entangled-photon generation in nano-to-bulk crossover regime

TL;DR

This paper theoretically explores how semiconductor films in the nano-to-bulk crossover regime can be engineered to efficiently generate entangled photon pairs with high statistical accuracy, surpassing traditional quantum dot and bulk material methods.

Contribution

It introduces a novel approach to control entangled photon states via exciton-photon mode design in nano-to-bulk crossover films, enhancing generation efficiency and statistical accuracy.

Findings

Enhanced radiative decay rate improves photon pair statistics.

Designing energy structures allows control over entangled states.

Optical cavities further boost generation efficiency.

Abstract

We have theoretically investigated a generation of entangled photons from biexcitons in a semiconductor film with thickness in nano-to-bulk crossover regime. In contrast to the cases of quantum dots and bulk materials, we can highly control the generated state of entangled photons by the design of peculiar energy structure of exciton-photon coupled modes in the thickness range between nanometers and micrometers. Owing to the enhancement of radiative decay rate of excitons at this thickness range, the statistical accuracy of generated photon pairs can be increased beyond the trade-off problem with the signal intensity. Implementing an optical cavity structure, the generation efficiency can be enhanced with keeping the high statistical accuracy.