Theoretical Prediction of Topological Insulators in Thallium-based III-V-VI$_2$ Ternary Chalcogenides
Binghai Yan, Chao-Xing Liu, Hai-Jun Zhang, Chi-Yung Yam, Xiao-Liang, Qi, Thomas Frauenheim, Shou-Cheng Zhang

TL;DR
This paper predicts a new class of three-dimensional topological insulators in thallium-based ternary chalcogenides, highlighting their surface states, potential superconductivity, and tunable topological phases under pressure.
Contribution
It introduces a new class of topological insulators in Tl-based III-V-VI$_2$ compounds, with detailed mechanisms and potential for topological superconductivity.
Findings
Robust surface states with a single Dirac cone at the $a0$ point.
TlBiTe$_2$ can become a superconductor when doped.
TlSbS$_2$ can undergo a topological phase transition under pressure.
Abstract
We predict a new class of three dimensional topological insulators in thallium-based III-V-VI ternary chalcogenides, including TlBiQ and TlSbQ (Q = Te, Se and S). These topological insulators have robust and simple surface states consisting of a single Dirac cone at the point. The mechanism for topological insulating behavior is elucidated using both first principle calculations and effective field theory models. Remarkably, one topological insulator in this class, TlBiTe is also a superconductor when doped with -type carriers. We discuss the possibility that this material could be a topological superconductor. Another material TlSbS is on the border between topological insulator and trivial insulator phases, in which a topological phase transition can be driven by pressure.
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