Spin relaxation: From 2D to 1D

TL;DR

This paper discusses how reducing the width of semiconductor channels from 2D to 1D affects electron spin relaxation times, highlighting the transition in relaxation mechanisms due to spin-orbit interactions.

Contribution

It provides a theoretical analysis of the dimensional crossover in spin relaxation mechanisms from 2D to 1D in semiconductors.

Findings

Spin relaxation times increase as channel width decreases.

The transition from 2D to 1D modifies the dominant relaxation mechanism.

The work predicts a slowdown of spin relaxation approaching 1D limit.

Abstract

In inversion asymmetric semiconductors, spin-orbit interactions give rise to very effective relaxation mechanisms of the electron spin. Recent work, based on the dimensionally constrained D'yakonov Perel' mechanism, describes increasing electron-spin relaxation times for two-dimensional conducting layers with decreasing channel width. The slow-down of the spin relaxation can be understood as a precursor of the one-dimensional limit.