Electrically Detected Magnetic Resonance Applied to the Study of Near Surface Electron Donors in Silicon

TL;DR

This paper demonstrates the use of electrically detected magnetic resonance (EDMR) to study near-surface electron donors in silicon, revealing interactions between donor and trap states in doped silicon devices.

Contribution

It applies EDMR to small silicon devices with various phosphorus concentrations and surface types to analyze donor-trap interactions.

Findings

EDMR signals depend on phosphorus concentration and surface type

Donor and trap states influence EDMR signal characteristics

Method provides insights into near-surface electronic properties

Abstract

Electrically detected magnetic resonance (EDMR) is applied to mm size devices with implanted leads and a 50 micron square gap laid down on bulk phosphorus doped silicon. Devices with a range of phosphorus concentrations and surface types were prepared and measured to examine the interplay between donor and charge trap states in producing EDMR signals.