100 GHz Transistors from Wafer Scale Epitaxial Graphene

TL;DR

This paper reports the fabrication of high-performance 100 GHz graphene transistors on wafer-scale epitaxial graphene, demonstrating superior high-frequency performance compared to silicon transistors at similar gate lengths, highlighting graphene's potential for advanced electronics.

Contribution

It presents the first wafer-scale epitaxial graphene transistors achieving 100 GHz cutoff frequency, surpassing previous graphene devices and silicon transistors at comparable gate lengths.

Findings

Achieved 100 GHz cutoff frequency on a 2-inch wafer

High-frequency performance exceeds previous graphene devices

Outperforms Si MOSFETs at the same gate length

Abstract

High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gate length of 240 nm. The high-frequency performance of these epitaxial graphene transistors not only shows the highest speed for any graphene devices up to date, but it also exceeds that of Si MOSFETs at the same gate length. The result confirms the high potential of graphene for advanced electronics applications, marking an important milestone for carbon electronics.