Silicon Photo-Multiplier radiation hardness tests with a beam controlled neutron source

TL;DR

This study evaluates the radiation hardness of silicon photomultipliers using a neutron source, revealing performance degradation after exposure to specific neutron fluences, which informs their suitability for radiation-prone environments.

Contribution

First comprehensive neutron irradiation tests on silicon photomultipliers from multiple manufacturers using a controlled neutron source.

Findings

Performance deteriorates after ~10^8 neutrons/cm^2

Degradation observed during irradiation, indicating radiation sensitivity

Data supports assessing photomultiplier suitability in radiation environments

Abstract

We report radiation hardness tests performed at the Frascati Neutron Generator on silicon Photo-Multipliers, semiconductor photon detectors built from a square matrix of avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated integrating up to 7x10^10 1-MeV-equivalent neutrons per cm^2. Detector performances have been recorded during the neutron irradiation and a gradual deterioration of their properties was found to happen already after an integrated fluence of the order of 10^8 1-MeV-equivalent neutrons per cm^2.