Electron bunching in triple quantum dot interferometers

TL;DR

This paper investigates electron transport and noise in a triple quantum dot ring, revealing how gate voltage detuning affects interference and enables tunable shot noise for potential current source applications.

Contribution

It provides analytical insights into how detuning influences interference effects and noise properties in triple quantum dot interferometers, highlighting tunable shot noise.

Findings

Interference effects fade with detuning, making current flux-independent.

Noise exhibits bunching effects controlled by gate voltage.

Analytical results support tunable shot noise potential.

Abstract

We study electron transport through a triple quantum dot in ring configuration at finite bias. In particular, we analyze the influence of a gate voltage that detunes one of the dots, such that one branch of the interferometer becomes off-resonant. It turns out that then interference effects fade away, i.e., the current becomes independent of a penetrating flux and the detuning. The noise properties which are characterized by the full-counting statistics, however, are governed by bunching effects that may be tuned by the gate voltage. Analytical results for limiting cases support this picture. A possible application is the construction of current sources with widely tunable shot noise properties.