Fabrication and characterization of an induced GaAs single hole transistor

TL;DR

This paper reports the fabrication and characterization of an undoped GaAs single hole transistor, demonstrating Coulomb blockade and low charge noise comparable to modulation-doped devices, advancing quantum dot technology.

Contribution

It introduces a novel undoped GaAs single hole transistor with electric field population, showing improved charge noise performance over silicon SETs.

Findings

Periodic conductance oscillations due to Coulomb blockade

Charge noise comparable to modulation-doped GaAs SETs

Charge noise nearly ten times lower than silicon SETs

Abstract

We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation doping. Low temperature transport measurements reveal periodic conductance oscillations due to Coulomb blockade. We find that the low frequency charge noise is comparable to that in modulation-doped GaAs single electron transistors (SETs), and almost an order of magnitude better than in silicon SETs.