Supersymmetry Across Nanoscale Heterojunction

TL;DR

This paper explores the application of supersymmetric transformation techniques to nanoscale heterojunctions, providing a framework for analyzing physical properties across semiconductor interfaces with exact solutions for certain potential profiles.

Contribution

It introduces a novel approach applying supersymmetry to heterojunctions, enabling analytical treatment of potential distortions at semiconductor interfaces.

Findings

Supersymmetric transformations can be applied across heterojunctions.

Exact analytical solutions are obtained for Morse-Type potentials.

A framework for estimating physical quantities at semiconductor interfaces is developed.

Abstract

We argue that supersymmetric transformation could be applied across the heterojunction formed by joining of two mixed semiconductors. A general framework is described by specifying the structure of ladder operators at the junction for making quantitative estimation of physical quantities. For a particular heterojunction device, we show that an exponential grading inside a nanoscale doped layer is amenable to exact analytical treatment for a class of potentials distorted by the junctions through the solutions of transformed Morse-Type potentials.