Charge Sensing in Intrinsic Silicon Quantum Dots

TL;DR

This paper demonstrates charge sensing in a silicon quantum dot using a nearby SET, showing that electron addition induces measurable charge shifts, with over 20 charge events observed in the many-electron regime.

Contribution

It introduces a silicon-based charge sensing technique with a nearby SET in bulk silicon, enabling detection of multiple electron additions in a quantum dot.

Findings

Charge addition induces ~0.2e charge on the SET.

Over 20 charge additions observed in the many-electron regime.

Charge sensing demonstrated in bulk silicon quantum dots.

Abstract

We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that as an additional electron is added onto the quantum dot, a charge is induced on the SET of approximately 0.2e. These measurements are performed in the many electron regime, where we can count in excess of 20 charge additions onto the quantum dot.