Electrically-induced n-i-p junctions in multiple graphene layer structures

TL;DR

This paper investigates electrically-induced n-i-p junctions in multiple graphene layer structures, analyzing carrier densities and reverse currents to demonstrate potential for low-current optoelectronic devices.

Contribution

It provides a combined numerical and analytical study of carrier behavior and reverse current suppression in multiple-graphene-layer n-i-p junctions.

Findings

Reverse current can be substantially suppressed in moderate-GL structures.

Carrier densities and Fermi energies are accurately modeled.

Potential applications in electron and optoelectronic devices.

Abstract

The Fermi energies of electrons and holes and their densities in different graphene layers (GLs) in the n- and p-regions of the electrically induced n-i-p junctions formed in multiple-GL structures are calculated both numerically and using a simplified analytical model. The reverse current associated with the injection of minority carriers through the n- and p-regions in the electrically-induced n-i-p junctions under the reverse bias is calculated as well. It is shown that in the electrically-induced n-i-p junctions with moderate numbers of GLs the reverse current can be substantially suppressed. Hence, multiple-GL structures with such n-i-p junctions can be used in different electron and optoelectron devices.