Time-dependent magnetotransport in semiconductor nanostructures via the generalized master equation

TL;DR

This paper develops a generalized master equation approach to model time-dependent magnetotransport in two-dimensional semiconductor nanostructures, capturing both transient and steady-state electron transport without the Markov approximation.

Contribution

It introduces a high-order GME formalism to accurately describe elastic and inelastic transport processes influenced by geometry and magnetic fields.

Findings

GME formalism captures transient and steady-state transport.

Geometry and magnetic field significantly affect electron flow.

Method avoids Markov approximation for better accuracy.

Abstract

Transport of electrons through two-dimensional semiconductor structures on the nanoscale in the presence of perpendicular magnetic field depends on the interplay of geometry of the system, the leads, and the magnetic length. We use a generalized master equation (GME) formalism to describe the transport through the system without resorting to the Markov approximation. Coupling to the leads results in elastic and inelastic processes in the system that are described to a high order by the integro-differential equation of the GME formalism. Geometrical details of systems and leads leave their fingerprints on the transport of electrons through them. The GME formalism can be used to describe both the initial transient regime immediately after the coupling of the leads to the system and the steady state achieved after a longer time.