Strong energy-momentum dispersion of phonon-dressed carriers in the lightly doped band insulator SrTiO$_3$
W. Meevasana, X. J. Zhou, B. Moritz, C-C. Chen, R.H. He, S.-I., Fujimori, D.H. Lu, S.-K. Mo, R.G. Moore, F. Baumberger, T.P. Devereaux, D., van der Marel, N. Nagaosa, J. Zaanen, Z.-X. Shen

TL;DR
This study uses ARPES to analyze electron-phonon interactions in lightly doped SrTiO$_3$, revealing moderate coupling strength and contrasting with the stronger effects observed in doped Mott insulators, challenging assumptions about dielectric constant implications.
Contribution
First ARPES investigation of lightly doped SrTiO$_3$ showing moderate electron-phonon coupling, contrasting with doped Mott insulators and questioning the role of dielectric constant.
Findings
Moderate electron-phonon coupling with λ'~0.3-0.7.
No evidence of large pseudogap or small polaron phenomena.
Large dielectric constant does not necessarily imply strong el-ph coupling.
Abstract
Much progress has been made recently in the study of the effects of electron-phonon (el-ph) coupling in doped insulators using angle resolved photoemission (ARPES), yielding evidence for the dominant role of el-ph interactions in underdoped cuprates. As these studies have been limited to doped Mott insulators, the important question arises how this compares with doped band insulators where similar el-ph couplings should be at work. The archetypical case is the perovskite SrTiO (STO), well known for its giant dielectric constant of 10000 at low temperature, exceeding that of LaCuO by a factor of 500. Based on this fact, it has been suggested that doped STO should be the archetypical bipolaron superconductor. Here we report an ARPES study from high-quality surfaces of lightly doped SrTiO. Comparing to lightly doped Mott insulators, we find the signatures of only moderate…
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