Thermal shot noise in top-gated single carbon nanotube field effect transistors

TL;DR

This paper investigates the high-frequency noise characteristics of top-gated single carbon nanotube transistors, confirming theoretical predictions and demonstrating their potential as fast charge detectors in quantum electronics.

Contribution

It provides experimental validation of a theory predicting large transconductance corrections to thermal noise in 1D nanotube transistors and explores their application in high-frequency charge detection.

Findings

Confirmed large transconductance correction to thermal noise

Demonstrated nanotube transistors as fast charge detectors

Achieved resolution of 13 μe/√Hz in 0.2-0.8 GHz band

Abstract

The high-frequency transconductance and current noise of top-gated single carbon nanotube transistors have been measured and used to investigate hot electron effects in one-dimensional transistors. Results are in good agreement with a theory of 1-dimensional nano-transistor. In particular the prediction of a large transconductance correction to the Johnson-Nyquist thermal noise formula is confirmed experimentally. Experiment shows that nanotube transistors can be used as fast charge detectors for quantum coherent electronics with a resolution of $13\mathrm{\mu e/\sqrt{Hz}}$ in the 0.2-$0.8 \mathrm{GHz}$ band.