A novel and precise time domain description of MOSFET low frequency noise due to random telegraph signals

TL;DR

This paper introduces a new analytical and numerical method to accurately describe low-frequency noise in MOSFETs caused by random telegraph signals, considering different trap density distributions.

Contribution

It provides a novel approach to model and analyze the stochastic current fluctuations due to traps at the Si-SiO2 interface, including uniform and u-shaped trap density profiles.

Findings

The approach accurately models RTN in different trap density scenarios.

Formulas for relative error depend on capture and emission probabilities.

Experimental u-shape curves validate the theoretical model.

Abstract

Nowadays, random telegraph signals play an important role in integrated circuit performance variability, leading for instance to failures in memory circuits. This problem is related to the successive captures and emissions of electrons at the many traps stochastically distributed at the silicon-oxide (Si-SiO2) interface of MOS transistors. In this paper we propose a novel analytical and numerical approach to statistically describe the fluctuations of current due to random telegraph signal in time domain. Our results include two distinct situations: when the density of interface trap density is uniform in energy, and when it is an u-shape curve as prescribed in literature, here described as simple quadratic function. We establish formulas for relative error as function of the parameters related to capture and emission probabilities. For a complete analysis experimental u-shape curves are used and compared with the theoretical aproach.