Long wavelength properties of electron-TO-phonon interactions in polar crystals
Aleksandr Pishtshev

TL;DR
This paper presents a theoretical analysis of electron interactions with long-wavelength transverse optical phonons in polar crystals, highlighting enhanced interactions in ferroelectrics and establishing a relation to dipole-dipole interactions.
Contribution
It introduces a microscopic model accounting for electronic polarizability, explaining the enhanced electron-TO-phonon interaction in ferroelectrics and deriving a new relationship between interaction constants and material parameters.
Findings
Enhanced electron-TO-phonon interaction in ferroelectrics.
Established connection between electron-phonon interaction and dipole-dipole forces.
Derived a new equation linking interaction constants to material properties.
Abstract
Theoretical analysis dealing with the interaction of electrons with the polar long-wavelength transverse optical (TO) vibrations is presented. The theory is based on the model of a polar crystal with classical potentials, which takes into account the electronic polarizability effects. A significant enhancement of the strength of the electron-TO-phonon interaction in ferroelectrics is found. A microscopic justification of this effect is given. A bridge that relates the interaction of electrons with the polar long-wavelength TO modes of the lattice vibrations to the long-range dipole-dipole interaction is established. As an application of our analysis, a new equation representing the relationship between the electron-TO-phonon interaction constant and material parameters is obtained.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsAdvanced Materials and Semiconductor Technologies · Advanced Energy Technologies and Civil Engineering Innovations · GaN-based semiconductor devices and materials
