Spin Torques in Point Contacts to Exchange-Biased Ferromagnetic Films

TL;DR

This study investigates hysteretic magneto-resistance in point contacts to exchange-biased ferromagnetic films, revealing surface spin reversals and their dependence on exchange pinning and current density, supporting a surface spin-valve model.

Contribution

It provides experimental evidence for surface spin reversals in exchange-biased ferromagnetic films and links these to the surface spin-valve model with current-dependent effects.

Findings

Surface spin reversal depends on exchange pinning direction.

Switching fields vary with contact microstructure and current density.

Interior spins remain unaffected at high currents.

Abstract

Hysteretic magneto-resistance of point contacts formed between non-magnetic tips and single ferromagnetic films exchange-pinned by antiferromagnetic films is investigated. The analysis of the measured current driven and field driven hysteresis agrees with the recently proposed model of the surface spin-valve, where the spin orientation at the interface can be different from that in the bulk of the film. The switching in magneto-resistance at low fields is observed to depend significantly on the direction of the exchange pinning, which allows identifying this transition as a reversal of interior spins of the pinned ferromagnetic films. The switching at higher fields is thus due to a spin reversal in the point contact core, at the top surface of the ferromagnet, and does not exhibit any clear field offset when the exchange-pinning direction or the magnetic field direction is varied. This magnitude of the switching field of the surface spins varies substantially from contact to contact and sometimes from sweep to sweep, which suggests that the surface coercivity can change under very high current densities and/or due to the particular microstructure of the point contact. In contrast, no changes in the effect of the exchange biasing on the interior spins are observed at high currents, possibly due to the rapid drop in the current density away from nanometer sized point contact cores.