Gate-controlled one-dimensional channel on the topological surface

TL;DR

This paper explores how gate voltages can create and control one-dimensional channels on topological surfaces, affecting their electronic properties and enabling tunable correlation effects.

Contribution

It introduces a method to form and manipulate 1D channels on topological surfaces using gate electrodes, revealing their energy dispersion and correlation tunability.

Findings

Channels exhibit almost linear energy dispersion with gate-dependent velocity.

Energy states are asymmetric and depend on gate voltage strength.

Correlation effects can be tuned by adjusting the gate voltage.

Abstract

We investigate the formation of the one-dimensional channels on the topological surface under the gate electrode. The energy dispersion of these channels is almost linear in the momentum with the velocity sensitively depending on the strength of the gate voltage. The energy is also restricted to be positive or negative depending on the strength of the gate voltage. Consequently, the local density of states near the gated region has an asymmetric structure with respect to zero energy. In the presence of the electron-electron interaction, the correlation effect can be tuned by the gate voltage. We also suggest a tunneling experiment to verify the presence of these bound states.