High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis

TL;DR

This paper presents a scalable method for fabricating high-yield graphene oxide FETs using dielectrophoresis, with improved electrical performance after annealing, demonstrating potential for nanoelectronic device manufacturing.

Contribution

Introduces a high-yield, scalable fabrication process for RGO FETs via dielectrophoresis with enhanced electrical properties after annealing.

Findings

Device resistance improved by an order of magnitude after annealing.

All devices exhibited FET behavior with notable mobilities.

Method shows promise for large-scale graphene nanoelectronics.

Abstract

We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets suspended in water assembled via dielectrophoresis. The two terminal resistances of the devices were improved by an order of magnitude upon mild annealing at 200 0C in Ar/H2 environment for 1 hour. With the application of a backgate voltage, all of the devices showed FET behavior with maximum hole and electron mobilities of 4.0 and 1.5 cm2/Vs respectively. This study shows promise for scaled up fabrication of graphene based nanoelectronic devices.