Conversion of neutral nitrogen-vacancy centers to negatively-charged nitrogen-vacancy centers through selective oxidation

TL;DR

This paper demonstrates a method to convert neutral nitrogen-vacancy centers to negatively charged ones in diamond using selective oxidation, which is crucial for quantum sensing and information devices.

Contribution

It introduces a surface oxidation technique at 465°C to control the charge state of nitrogen-vacancy centers near the diamond surface.

Findings

Conversion achieved through oxygen exposure at 465°C

Spectral properties of charge-converted centers characterized

Charge control enhances quantum device integration

Abstract

The conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers is demonstrated for centers created by ion implantation and annealing in high-purity diamond. Conversion occurs with surface exposure to an oxygen atmosphere at 465 C. The spectral properties of the charge-converted centers are investigated. Charge state control of nitrogen-vacancy centers close to the diamond surface is an important step toward the integration of these centers into devices for quantum information and magnetic sensing applications.