Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature

TL;DR

This study demonstrates that applying a perpendicular electric field to bilayer graphene nanoribbons at room temperature opens a tunable band gap of approximately 50 meV, highlighting their potential for CMOS-compatible FET applications.

Contribution

The paper provides experimental evidence of a tunable band gap in bilayer graphene nanoribbons using conventional fabrication methods at room temperature.

Findings

Band gap of ~50 meV observed

Electric field controls the band gap

Potential for CMOS-compatible FETs

Abstract

We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge neutrality point as a function of the electric field applied perpendicular to the graphene surface, we show that a band gap in the density of states opens, reaching an effective value of ~sim50 meV. This demonstrates the potential of bilayer graphene as FET channel material in a conventional CMOS environment.