Graphene Growth by Metal Etching on Ru(0001)
E. Loginova, S. Maier, I. Stass, N. C. Bartelt, P. J. Feibelman, M., Salmeron, and K. F. McCarty
TL;DR
This paper uncovers a novel graphene growth mechanism on Ru(0001) involving metal etching and atom injection under the graphene, supported by microscopy and computational modeling.
Contribution
It introduces a new growth mode for graphene on Ru(0001) involving metal etching and atom injection, supported by experimental and theoretical evidence.
Findings
Ru atoms are etched and injected under graphene during growth.
Injected Ru atoms form metastable islands beneath graphene.
Dislocation networks near step edges indicate atom incorporation into Ru layers.
Abstract
Low-energy electron microscopy (LEEM) reveals a new mode of graphene growth on Ru(0001) in which Ru atoms are etched from a step edge and injected under a growing graphene sheet. Based on density functional calculations, we propose a model wherein injected Ru atoms form metastable islands under the graphene. Scanning tunneling microscopy (STM) reveals that dislocation networks exist near step edges, consistent with some of the injected atoms being incorporated into the topmost Ru layer, thereby increasing its density.
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Taxonomy
TopicsGraphene research and applications · Surface and Thin Film Phenomena · Chemical and Physical Properties of Materials