Enhanced shot noise in carbon nanotube field-effect transistors

TL;DR

This paper predicts and explains shot noise enhancement in defect-free carbon nanotube FETs using advanced numerical methods, revealing a significant Fano factor due to correlated trapping and injection processes.

Contribution

It introduces a detailed numerical model combining NEGF and Monte Carlo methods to analyze shot noise in CNT FETs, highlighting a novel noise enhancement mechanism.

Findings

Shot noise can be enhanced with a Fano factor of 1.22 at room temperature.

Correlation between hole trapping and electron injection causes noise increase.

The model accurately reproduces shot noise behavior in defect-free CNT FETs.

Abstract

We predict shot noise enhancement in defect-free carbon nanotube field-effect transistors through a numerical investigation based on the self-consistent solution of the Poisson and Schrodinger equations within the non-equilibrium Green functions formalism, and on a Monte Carlo approach to reproduce injection statistics. Noise enhancement is due to the correlation between trapping of holes from the drain into quasi-bound states in the channel and thermionic injection of electrons from the source, and can lead to an appreciable Fano factor of 1.22 at room temperature.