Photon assisted tunneling as an origin of the Dynes density of states
J. P. Pekola, V. F. Maisi, S. Kafanov, N. Chekurov, A. Kemppinen, Yu., A. Pashkin, O.-P. Saira, M. Mottonen, and J. S. Tsai

TL;DR
This paper demonstrates that environmental effects, modeled as photon-assisted tunneling, can produce a Dynes-like density of states in superconductor tunnel junctions, impacting device performance.
Contribution
It introduces a theoretical framework linking high-temperature environment effects to the Dynes DOS, supported by experimental validation, and applies this to enhance single-electron turnstile operation.
Findings
High-temperature environments induce a Dynes-like DOS in superconductor junctions.
Experimental data supports the photon-assisted tunneling model.
Improved single-electron turnstile performance achieved.
Abstract
We show that the effect of a high-temperature environment in current transport through a normal metal-insulator-superconductor tunnel junction can be described by an effective density of states (DOS) in the superconductor. In the limit of a resistive low-ohmic environment, this DOS reduces into the well-known Dynes form. Our theoretical result is supported by experiments in engineered environments. We apply our findings to improve the performance of a single-electron turnstile, a potential candidate for a metrological current source.
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