Inelastic scattering and heating in a molecular spin pump

TL;DR

This paper models a spin field-effect molecular transistor, analyzing inelastic scattering and heating effects, and demonstrates control of molecular junction heating via external electric and magnetic fields through numerical simulations.

Contribution

It introduces a comprehensive framework for understanding inelastic scattering and heating in a spin molecular transistor, highlighting external field control of junction heating.

Findings

Heating can be modulated by electric and magnetic fields.

Inelastic scattering effects are characterized within full counting statistics.

Numerical results demonstrate controllable heating in the molecular device.

Abstract

We consider a model for a spin field-effect molecular transistor, where a directed pure spin current is controlled by an external electric field. Inelastic scattering effects of such molecular device are discussed within a framework of full counting statistics for a multi-level molecular system. We propose that the heating of the molecular junction can be controlled by external electric and magnetic fields. Characteristic features of the model are demonstrated by numerical calculations.